Hall effect measurement system

Characterization of various materials including all semiconductors including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type can be measured), metal layers, oxides, etc. Testing of Temperature vs carrier density, mobility,resistivity, hall coefficient, conductivity, etc.

• Sample size: 5 mm x 5mm up to 15mm x 15mm
• Resistivity: 10-4 to 107 (Ohms-cm)
• Magnet: permanent magnet, 30 mm diameter
• Magnet Flux Density: 0.55 T nominal ±1% of marked value
• Mobility: (cm2/Volt-sec) 1 ~ 107
• Concentration: (cm-3): 107~ 1021
• Current Source: range: 1 nA – 20 mA compliance: 12 V
• Minimum Hall voltage: 1 μV
• Temperature ranges: 5000: 80K to 350K (only)