Nr of wavelengths: 1065.

Incident angles: 45° – 90°.

Measure complete spectrum in 1/3 of a second.

Spot size: 120 μm.

Sample scan: up to 200 mm (8 inch).

Obtainable Data

• Film thickness
• Dispersion of complex optical constants:
  • Refractive index n
  • Extinction coefficient k
• Band gap
• Surface roughness
• Interfacial mixing
• Uniformity
• Anisotropy
• Composition
• Crystallinity
• Graded film
• Porous films

Materials

• Thin films starting from ~1 nm
• Thick films up to ~ 10 mm
• Multilayers and bulks
• Any materials (metals, semiconductors, dielectrics), which reflects light in the given wavelength range
• Liquid samples

Application

• Low bandgap semiconductors
• Conductive organics
• Metals, alloys
• Dielectrics
• Mapping: map thin film uniformity (e.g., of wafers or glass panels)
• Anisotropic applications

Display applications: measurements of a-Si, poly-Si, microcrystalline-Si, OLED layers, color filters, ITO, MgO, polyimide, and liquid crystals are beneficial during display R&D and production.

PRECISION AND ACCURACY

• Data accuracy: Y = 0.006°, D= 0.015°
• Thickness precision, StdDev down to 0.01 Å
• Optical constant precision, StDev down to 0.0001

MEASUREMENT CAPABILITIES

• SE: Y and D over their full wavelength range
• Generalized SE: complete 2×2 Jones matrix for anisotropic samples
• Mueller Matrix SE: all 16 elements of the 4×4 Mueller matrix
• Depolarization: measure and model the non-ideal nature of your sample

Intensity: both reflectance and transmittance, including anisotropic terms such as like and cross-polarized intensities.

Other Applications

• Transmission measurements
• Thermo-optical investigations
• Se measurements on in vivo tissues

WORKING PRINCIPLE

Spectroscopic ellipsometry (SE) measures changes in the reflectance and phase difference between the parallel (R_p) and perpendicular (R_s) components of a polarized light beam upon direct reflection from a surface of liquid or solid sample. 

Reflectance (p, s) is described by the main ellipsometric angles Y and D. Because ellipsometry measures the ratio of two values originated by the same signal, the data collected are highly accurate (e.g., can detected thickness down to Å resolution), and reproducible. Most importantly, no reference specimen is necessary; the measurements are independent from the light source intensity and mechanical vibrations.

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• power max 2.2 kW, 60 kV
• long fine focus ceramic tube, type PW3373/00

Vertical goniometer (theta-theta)

• usable range -40°<2θ<220°,
• 240 mm radius

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2 sources for evaporation of organic materials:

• provides precisely-controlled thermal evaporation of organic molecular material.
• easily changeable crucible with 2cc capacity.
• working temperature range of 50 to 600C.
• direct-contact thermocouple for precise temperature measurement. Temperature control accuracy ±0.1C.

Sample work-holder: 

• static fluid cooled and heated workholder with 100 mm usable diameter, -20 °C to + 90°C operation range.
• external desktop closed-loop heater-cooler (-20 to +90 °C), with fluid reservoir and electronic temperature control.

Film thickness measuring system: 

• quartz crystal thin film deposition system with digital display of deposition rate and deposition thickness (0.1nm – 3µm), information storage for 11 sputtering materials.
• facility to control up to 2 source shutters automatically and close shutters when pre-programmed termination thickness values are achieved.

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• modular design with all versatile Raman technologies
• automated operation from laser/optics selections, alignment/calibration, XYZ scanning to data mapping

Lasers:

• deep UV and NIR wavelength range
• up to 4 integrated multi-line lasers plus port for large external lasers
• dual beam path for UV and VIS/NIR lasers

Spectrograph:

• 500 mm or 750 mm focal length spectrograph
• high spectral resolution, i.e., FWHM < 0.1 cm-1 @ 633nm
• high frequency range up to 9000 cm-1 (@ 532nm), useful for photoluminescence for additional benefit
• low frequency range down to +/- 10 cm-1 with ultra-narrow band notch filters

Spectroscopy detectors:

• wide range of spectroscopy detection selection: Peltier and liquid nitrogen cooled detectors
• CCD detectors; InGaAs array detectors; EMCCs; PMTs

Microscopes:

• confocal microscopes with sub-micron spatial resolution
• upright or inverted, or dual upright/inverted microscopes
• wide choice of UV, VIS, and NIR objectives
• built-in polarizers with automated selection

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Temperature control range: 0–90 °C

Light source: laser / 40 mW, 658 nm

Particle size specifications

Measuring range:  0.3 nm – 10 μm (particle diameter)

Sensitivity:

• min. conc. (protein) 0.1 mg/mL (lysozyme)
• min. conc. (polymer) 1 µg/mL (polystyrene latex)

Accuracy: better than +/-2 % on certified reference material

Repeatability: better than +/-2 % on certified reference material

Minimum sample volume: 12 µL

Measurement angles: 15°, 90°, 175°

Zeta potential specifications

Measuring range: -600 to +600 mV

Mobility: 10-11 m²/V.s to 2 x 10-7 m²/V.s

Size range: 3.8 nm – 100 µm

Sensitivity: 1 mg/mL (lysozyme)

Maximum sample concentration: 40 % w/v

Sample volume: 350 µL

Maximum sample conductivity: 200 mS/cm

Molecular mass specifications

Measuring range (mass): 980 Da – 20 MDa

Measuring range (particle size): up to 40 nm (diameter)

Sensitivity: 0.1 mg/mL (lysozyme)

Accuracy: +/-10 %

Repeatability: +/-5 %

Measurement angle: 90°

Transmittance specifications

Size range: no limit

Measuring time: 10 s

Minimum sample volume: 15 µL

Refractive index specifications

Measuring range: 1.28 to 1.50

Accuracy: +/-0.5 %

Temperature range: 0 °C to 90 °C

Wavelength: 658 nm

Minimum sample volume: 1 mL

Wetted parts: quartz, glass

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8-position automatic sample changer

Software:         

• instrument control: Control & Measurement
• data analysis: PDXL

X-Ray Generator:

• maximum power: 600 W
• tube voltage: 40 kV
• tube current: 15 mA

Shutter: rotary shutter linked to interlock

X-ray tube: Cu

Optics:

• divergence slit: fixed or variable
• scattering slit: fixed
• receiving slit: fixed
• filter: Kβ foil filter
• monochromator: graphite
• soller slit: 5.0° or 2.5°

Goniometer:

• type: vertical
• radius: 150 mm
• scanning range: -3 to 145° (2θ)
• scanning speed: 0.01 to 100°/min (2θ）
• minimum step width: 0.005° (2θ）
• accuracy: ±0.02°

Detector:

• scintillation counter: NaI scintillator
• D/teX Ultra: high speed silicon strip detector

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• sensor 1: room temperature to 800 °C
• sensor 2: room temperature to 1 600 °C

Isothermal temperature accuracy: +/- 1 °C

Programmable temperature scanning rate (heating and cooling): 0.01 to 100 °C.min-1

Furnace cooling:

• 30 min (1150 °C to 50 °C)
• 32 min (1 600 °C to 50 °C)

Maximum balance capacity: 20 g

DSC rod – Resolution: 0.4 μW / 10 μW dependent on sensor

3D Cp rod – Cp Accuracy: < 2 %,

Vacuum: < 10-1 mbar

Evolved Gas Analysis

MS, FTIR, GC/MS coupling

Gas Flow Control         

Two inlets for gas scanning (inert or reactive)

Option: 3 carrier gases (MFC from 4 to 200 ml/min) and 1 auxiliary or reactive gas (MFC from 0.3 to 16 ml/min)

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Grating: 70 x 45 mm

• UV-Vis: ruled line diffraction grating, 1200 lines/mm blazed at 250 nm
• NIR: ruled line diffraction grating, 300 lines/mm blazed at 1192 nm

Beam splitting system: rotating beam splitter, which measures a sample, dark and reference signal per cycle with a speed of 30 Hz

Detectors

• UV-Vis:  R928 PMT
• NIR:  cooled PbSmart PbS

Limiting resolution (nm)

• UV-Vis:  <0.048 nm
• NIR:  <0.2 nm

Wavelength range (nm): 175–3300 nm

(N₂ purge required below 185 nm)

Wavelength accuracy (nm)

Deuterium lamp lines

• UV-Vis: 190–900 nm ± 0.08 nm
• NIR: 760–3000 nm ± 0.4 nm

The spectrophotometer is equipped with Cary Universal Measurement Accessory (UMA)

Cary UMA Specification

Measurement Modes:

• absolute specular reflection at variable angle from 5 to 85 degrees in 0.02 degree intervals
• direct transmission and variable angle transmission from 0 to 180 degrees in 0.02 degree intervals
• diffuse scattering, reflection or transmission through independent sample rotation (360 degrees) and detector positioning (10 – 350 degrees) at 0.02 degree intervals
• absorptance, A where A= 1 – R – T at variable angle without moving the sample or beam onto the sample for improved productivity and greater accuracy
• reflection/transmission at single wavelength (read) or wavelength range (scan)

Wavelength range: 190 – 2800 nm

Auto polarizer wavelength range: 250 – 2500 nm

Detectors: two-colored Si/InGaAs

Aperture masks:

• incident beam: 1, 2 and 3 degrees
• detector: 1, 1.8, 2, 3, 4, 4.4, 5 and 6 degrees

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Substrate thickness up to 6 mm.

Exposure modes:

• proximity
• soft contact
• hard contact
• vacuum contact
• 350 W exposure lamp, Hg

Alignment mode:

• top side

Chucks:

• 1″ square chuck for pieces at least 10×10 mm up to substrates 1″ x 1″
• 2×2″ square
• 4″ (100 mm) wafer

Mask holders:

• 2 inch
• 3 inch, possible to use proximity flags
• 5 inch, possibility to use proximity flags

Filters:

• i-line filter
• ND33 filter

Objective:

• 5x
• 7.5 offset

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• Minimum feature size < 10 nm
• Beam energy range: 20 V to 30 kV
• Writing field size: 0.5 μm to 2 mm
• Field stitching < 40 nm

Traxx  – this unique function allows possibility to move the stage continously during an exposure, with this function it is possible to create long lines with arbitrary curvature without any stitching error at all

Periodixx – MBMS exposure mode, the beam movement is defined such that the combination of repetitive patterning and synchronized continuous movement of the laser interferometer stage results in stitch-free, strip-shaped periodic structures

Substrate holders:

• universal sample holder – small pieces up to 2 inch wafer
• 2 inch wafer holder
• 3 inch wafer holder
• 4 inch mask holder

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